Abstract
Nanostructures have revolutionized semiconductor technology by enabling enhanced control over electrical, optical, and thermal properties at the nanoscale. This paper explores how the integration of nanostructures—such as quantum dots, nanowires, and two-dimensional materials—has significantly improved semiconductor device performance, including charge carrier mobility, heat dissipation, and quantum efficiency. By tailoring material dimensions and interfaces at the atomic level, researchers have developed next-generation transistors, photodetectors, and solar cells with unprecedented capabilities. This article examines the underlying mechanisms, recent advancements, and challenges associated with implementing nanostructures in semiconductor devices, offering insights into future directions for nanotechnology-driven electronics.

This work is licensed under a Creative Commons Attribution 4.0 International License.